4 HIGH ISOLATION BUFFER AMPLIFIER
• Local Oscillator Buffer Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Wireless LAN
• ISM Band Applications
The RF2301 is a high reverse isolation buffer amplifier.
The device is manufactured on a low-cost Gallium Ars-
enide MESFET process, and has been designed for use
as a general purpose buffer in high-end communication
systems operating at frequencies from less than 300MHz
to higher than 2500MHz. With +5dBm output power, it
may also be used as a driver in transmitter applications.
The device is packaged in an 8-lead plastic package. The
product is self-contained, requiring just a resistor and
blocking capacitors to operate. The output power, com-
bined with 50dB reverse isolation at 900MHz allows
excellent buffering of LO sources to impedance changes.
The device can be used in 3V battery applications. The
unit has a total gain of 17dB with only 14mA current from
a 3V supply.
Optimum Technology Matching® Applied
RF IN 3
6 RF OUT
Dimensions in mm
1. Shaded lead is Pin 1.
2. All dimensions are excluding
3. Lead coplanarity -
0.005 with respect to datum "A".
Package Style: SOIC-8
• Single 2.7V to 6.0V Supply
• +4dBm Output Power
• 21dB Small Signal Gain
• 50dB Reverse Isolation at 900MHz
• Low DC Current Consumption of 14mA
• 300MHz to 2500MHz Operation
High Isolation Buffer Amplifier
RF2301 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
Rev A8 010717