The RF3376 is a general purpose, low-cost RF amplifier IC.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block.
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RF3376. For precise diagrams, and layout, please refer to the original PDF.
RF3376General Purpose Amplifier RF3376 General Purpose Amplifier Package Style: SOT8 Features DC to >6000MHz Operation Internally Matched Input and Output 22dB Smal...
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o >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11dBm Output P1dB Useable with 5V Supply Applications Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF IN GND RF OUT GND 4 123 Functional Block Diagram Product Description The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use
RF3376 Datasheet
