RF3855 Key Features
- Single 3.1V Supply
- Part: RF3855
- Manufacturer: RF Micro Devices
- Size: 169.94 KB
Related RF Micro Devices Datasheets
| Part Number | Description |
|---|---|
| RF3854 | QUADRATURE MODULATOR AND PA DRIVER |
| RF3857 | DUAL CHANNEL LNA |
| RF3858 | 3.0 V TO 4.2V ISM BAND TRANSMIT/RECEIVE MODULE |
| RF3800 | GaAs HBT PRE-DRIVER AMPLIFIER |
| RF3800PCBA-416 | GaAs HBT PRE-DRIVER AMPLIFIER |
RF3855 Description
The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SAT Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground.