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RF Micro Devices

RFCA1008 Datasheet Preview

RFCA1008 Datasheet

High Linearity InGaP HBT Amplifier

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RFCA1008
5MHz to 1000MHz, Push-Pull, High
Linearity InGaP HBT Amplifier
Package Style: SOIC-8
Features
„ 5V Single Supply
„ Excellent Linearity
Performance at +34dBmV
Output Power per Tone
„ Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
Configuration PC Board
Layout
„ Available in Lead-free, RoHS
Compliant, and Green
Packaging
„ SOIC-8 Package
Applications
„ CATV Head End Driver and
Predriver Amplifier
„ CATV Line Driver Amplifier
18
27
36
45
Functional Block Diagram
Product Description
RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with
the InGaP process technology for excellent reliablility. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions. A Darlington
configuration is utilized for broadband performance. The RFCA1008 contains two
amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second
order performance; the second and third order non-linearities are greatly improved
in the push-pull configuration.
Ordering Information
RFCA1008SQ
RFCA1008SR
RFCA1008TR13
RFCA1008PCK-410
25 Piece sample bag
7” Sample reel with 100 pieces
13” Reel with 2500 pieces
50MHz to 1000MHz, PCBA with 5-piece sample bag
DS130627
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
9InGaP HBT
Si BiCMOS
SiGe HBT
Si CMOS
Si BJT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 23




RF Micro Devices

RFCA1008 Datasheet Preview

RFCA1008 Datasheet

High Linearity InGaP HBT Amplifier

No Preview Available !

RFCA1008
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
300 mA
Max Device Voltage (VD)
6V
Max RF Input Power
18 dBm
Max Junction Temp (TJ)
150 °C
Operating Temperature Range (TL)
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Notes:
1. Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in
the Absolute Maximum Ratings table above.
2. Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Nominal Operating Parameters
Parameter
Specification
Min. Typ. Max.
Frequency Range
Small Signal Gain
Gain Flatness
Output IP3
50 1000
16.8
17.4
17.9
±0.5
40
Output IP2 Plus
65
Output IP2 Minus
P1dB
Input Return Loss
70
23
27
Output Return Loss
Noise Figure (Balun Insertion Loss
Included)
CSO
CTB
XMOD
Device Operating Voltage
Device Operating Current
16
4.0
80
76
69
5.0
215
Thermal Resistance
40
Note: VCC = 5V, IC = 215mA, TL = 25°C, ZS = ZL = 75Ÿ, Push Pull Application Circuit
Unit
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dBc
dBc
dBc
V
mA
°C/W
Condition
17dB Application, VCC = 5V, ICC = 215mA
50MHz; 5V, 25°C
500MHz; 5V, 25°C
1000MHz; 5V, 25°C
50MHz to 1000MHz per
ANSI/SCTE-144 2007
550MHz, Tone Spacing = 6MHz, POUT per
Tone = +5dBm
550MHz, Tone Spacing = 30MHz POUT per
Tone = 0dB
500MHz
50MHz to 1000MHz
79 Channel, Flat Tilt, +34dBmV
VCC = 5V
Junction to backside PCB under IC
2 of 23
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS130627


Part Number RFCA1008
Description High Linearity InGaP HBT Amplifier
Maker RF Micro Devices
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