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RFCM2680 Datasheet POWER DOUBLER MODULE

Manufacturer: RF Micro Devices (now Qorvo)

General Description

The RFCM2680 is a Power Doubler amplifier SMD Module.

The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz.

It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

Overview

RFCM2680 45MHz to 1003MHz GaAs/GaN Power Doubler MODULE RFCM2680 45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE Package: 9-pin, 9.0mm x 8.0mm x 1.

Key Features

  • Excellent Linearity.
  • Superior Return Loss Performance.
  • Extremely Low Distortion.
  • Optimal Reliability.
  • Low Noise.
  • Unconditionally Stable Under all Terminations.
  • Extremely High Output Capability.
  • 22.5dB Min. Gain at 1003MHz.
  • 450mA Max. at 24VDC.