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RF Micro Devices

RFPA1012 Datasheet Preview

RFPA1012 Datasheet

Power Amplifier

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RFPA1012
GaAs HBT
400MHz to
2700MHz
Power Ampli-
fier
RFPA1012
GaAs HBT 400MHz to 2700MHz
Power Amplifier
Package Style: DFN, 8-Pin, 2mm x 2mm
Features
High Linearity: OIP3 = 44dBm at
900MHz
Low Noise: NF = 3.5dB at
900MHz
Low DC Power: 5V, 90mA
400MHz to 2700MHz Operation
Applications
GaAs Pre-Driver for Base Station
Amplifiers
PA Stage for Commercial
Wireless Infrastructure
Class AB Operation for DCS, PCS,
UMTS, and WiFi Transceiver
Applications
2nd/3rd Stage LNA for Wireless
Infrastructure
NC 1
RFIN 2
NC 3
NC 4
8 VBIAS
7 RFOUT/VCC
6 VREF
5 NC
Functional Block Diagram
Product Description
The RFPA1012 is a GaAs HBT linear power amplifier specifically designed for wire-
less infrastructure applications. Using a highly reliable GaAs HBT fabrication pro-
cess, this high performance single-stage amplifier achieves ultra-high linearity over
a broad frequency range. It also offers low noise figure making it an excellent solu-
tion for 2nd and 3rd stage LNAs.
Ordering Information
RFPA1012SQ
Sample bag with 25 pieces
RFPA1012SR
7” Sample reel with 100 pieces
RFPA1012TR7
7” Reel with 2500 pieces
RFPA1012PCK-411 860MHz to 960MHz PCBA with 5-piece sample bag
RFPA1012PCK-412 2110MHz to 2170MHz PCBA with 5-piece sample bag
DS150622
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 11




RF Micro Devices

RFPA1012 Datasheet Preview

RFPA1012 Datasheet

Power Amplifier

No Preview Available !

RFPA1012
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC and VBIAS)
6.5
Reference Current (IREF)
5
DC Supply Current (IC)
256
CW Input Power, 2:1 Output VSWR
23
Output Load VSWR at P3dB
5:1
Operating Junction Temperature (TJ)
Operating Temperature Range (TL)
Storage Temperature
160
-40 to +105
-55 to +150
ESD Rating: Human Body Model (HBM)
Class 1B
Moisture Sensitvity Level
MSL 1
Notes: 1. The maximum ratings must all be met simultaneously.
2. PDISS = PDC + PRFIN - PRFOUT
3. TJ = TL + PDISS * RTH
Unit
V
mA
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
860MHz to 960MHz
Frequency
Gain (S21)
OIP3
P1dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
2110MHz to 2170MHz
Frequency
Gain (S21)
OIP3
P1dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
Power Supply
Operating Current (Quiescent)
Operating Voltage (VCC)
Thermal Resistance (RTH)
Power Down Current
Specification
Min. Typ. Max.
860 960
16
44
25
16
11
3.5
2110
13.9
42
22.5
11
11
3.2
2170
90
5.0
93.5
6.0
10
Unit
MHz
dB
dBm
dBm
dB
dB
dB
MHz
dB
dBm
dBm
dB
dB
dB
Condition
VCC = 5.0V, VREF = 5.0V, ICQ = 90mA, T = 25°C
Evaluation Circuit
6dBm/tone, tone spacing = 1MHz
T = 25°C
VCC = 5.0V, VREF = 5.0V, ICQ = 90mA, T = 25°C
Evaluation Circuit
6dBm/tone, tone spacing = 1MHz
T = 25°C
mA
V
°C/W
A
At VCC = 5.0V
Max recommended collector voltage
At quiescent current, no RF
At VREF = 0V
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS150622


Part Number RFPA1012
Description Power Amplifier
Maker RF Micro Devices
Total Page 11 Pages
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