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RFPA2226 Datasheet - RF Micro Devices

RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of lo.

RFPA2226 Features

* P1dB=33.5dBm at 5V, 2.4GHz

* 802.11g 54Mb/s Class AB Performance

* POUT=26dBm at 2.5% EVM, VCC 5V

* POUT=27dBm at 2.5% EVM, VCC 6V

* On-Chip Output Power Detector

* Input Prematched to ~5

* Proprietary Low Thermal Resistance Package

* Hand Solderable and Easy Rewor

RFPA2226-RFMicroDevices.pdf

Preview of RFPA2226 PDF
RFPA2226 Datasheet Preview Page 2 RFPA2226 Datasheet Preview Page 3

Datasheet Details

Part number:

RFPA2226

Manufacturer:

RF Micro Devices

File Size:

673.36 KB

Description:

2.2ghz to 2.7ghz 2w ingap amplifier.

RFPA2226 Distributor

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Stock and price

Distributor
Murata Manufacturing Co Ltd
GCG188L81C154KA01J
0 In Stock
Qty : 10000 units
Unit Price : $0.04