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RF Micro Devices

RFPA2226 Datasheet Preview

RFPA2226 Datasheet

2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

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RFPA2226
2.2GHz to
2.7GHz 2W
InGaP AMPLI-
FIER
RFPA2226
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
Package: QFN
Features
P1dB=33.5dBm at 5V, 2.4GHz
802.11g 54Mb/s Class AB
Performance
POUT=26dBm at 2.5% EVM,
VCC 5V
POUT=27dBm at 2.5% EVM,
VCC 6V
On-Chip Output Power Detector
Input Prematched to ~5
Proprietary Low Thermal
Resistance Package
Hand Solderable and Easy
Rework
Power Up/Down control <1s
Applications
802.16 WiMAX Driver or Output
Stage
2.4GHz 802.11 WiFi and ISM
Applications
RFPA2226
Functional Block Diagram
Product Description
RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encap-
sulated package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a flexible final or driver stage for 802.16
and 802.11 equipment in the 2.2GHz to 2.7GHz bands. It can run from a 3V to 6V
supply. It is prematched to ~50on the input for broadband performance and ease
of matching at the board level. It features an output power detector, on/off power
control, ESD protection, excellent overall robustness and a proprietary hand rework-
able and thermally enhanced QFN package. This product features a RoHS Compli-
ant and Green package with matte tin finish.
Ordering Information
RFPA2226SQ
RFPA2226SR
RFPA2226
RFPA2226-EVB1
RFPA2226-EVB2
Standard 25-piece bag
Standard 100-piece reel
Standard 1000-piece reel
Evaluation Board 2.4GHz to 2.5GHz Tune
Evaluation Board 2.5GHz to 2.7GHz Tune
DS121010
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 17




RF Micro Devices

RFPA2226 Datasheet Preview

RFPA2226 Datasheet

2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

No Preview Available !

RFPA2226
Absolute Maximum Ratings
Parameter
VC1 Collector Bias Current (IVC1)
**Device Voltage (VD)
Power Dissipation
*Max RF output Power for 50
continuous long term
operation
Rating
1500
7.0
6
30
Unit
mA
V
W
dBm
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Max RF Input Power for 50W
output load
Max RF Input Power for 10:1 VSWR
output load
28
23
dBm
dBm
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Junction Temp (TJ)
Operating Lead Temperature (TL)
Storage Temperature Range
+150
-40 to +85
-40 to +150
°C
°C
°C
ESD Rating - Human Body Model
1000
V
*Note: With specified application circuit
**Note: No RF Drive
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l
Parameter
Specification
Min. Typ.
Frequency of Operation,
Output Power at 1dB Compression
Small Signal Gain
EVM
2200
31.5
11.3
33.0
12.8
2.5
Third Order Suppression
-45.0
Noise Figure
4.3
Worst Case Input Return Loss
8.0
12.0
Worst Case Output Return Loss
8.0
12.0
Power Detector Range
0.75
Quiescent Current
395 445
Power Up Control Current
2.1
VCC Leakage Current
Thermal Resistance
12.0
Test Conditions: Z0=50, VCC=5V, IQ=445mA, TBP=30°C
Max.
2700
-42.0
2.2
495
10
Unit
MHz
dBm
dB
%
dBc
dB
dB
dB
V
mA
mA
A
°C/W
Condition
2.7 GHz
2.7 GHz
2.7GHz, 802.11g 54Mb/s at POUT=26dBm
2.7GHz, POUT=23dBm per tone
2.7 GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
POUT=10dBm to 30dBm
VCC = 5 V
VPC = 5 V
VCC=5V, VPC=0V
junction - lead
2 of 17
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS121010


Part Number RFPA2226
Description 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
Maker RF Micro Devices
Total Page 17 Pages
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