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RF Micro Devices

RFPA3805 Datasheet Preview

RFPA3805 Datasheet

GaAs HBT 2-Stage Power Amplifier

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RFPA3805
GaAs HBT 2-Stage Power Amplifier
700MHz to 2700MHz
RFMD’s RFPA3805 is a GaAs HBT linear power amplifier
specifically designed for Wireless Infrastructure applications.
Using a highly reliable GaAs HBT fabrication process, this high
performance two-stage amplifier achieves high linearity over a
broad frequency range. Its external matching allows for use
across various radio platforms within 700MHz to 2700MHz. The
RFPA3805 can also be optimized for high-efficiency applications.
28 27 26 25 24 23
NC 1
22 NC
NC 2
RFIN1 3
21 RFOUT2/VCC2
20 RFOUT2/VCC2
NC 4
19 RFOUT2/VCC2
NC 5
NC 6
NC 7
STG1
BIAS
CIRCUIT
STG2
BIAS
CIRCUIT
18 RFOUT2/VCC2
17 NC
16 NC
NC 8
15 NC
9 10 11 12 13 14
Functional Block Diagram
Ordering Information
RFPA3805SQ
Sample bag with 25 pieces
RFPA3805SR
7" Reel with 100 pieces
RFPA3805TR13
13" Reel with 2500 pieces
RFPA3805PCK-410 728MHz to 768MHz PCBA with 5-piece sample
bag
RFPA3805PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample
bag
RFPA3805PCK-412 2580MHz to 2690MHz PCBA with 5-piece sample
bag
RFPA3805
Package: QFN, 28-pin,
4.0mm x 5.0mm
Features
High Gain 20.5dB at 2.14GHz
High Linearity, OIP3 = 47.5dBm at
2.14GHz
Off-chip Interstage for Design
Flexibility
Independent Bias Control for Each
Stage
Power-down Capability
700MHz to 2700MHz Operation
Applications
GaAs Driver for Base Station
Amplifier
PA Stage for Commercial Wireless
Infrastructure
Final Stage PA in Femtocell and
Base Station Repeater
Applications
Final Stage PA in High Efficiency,
High Power Applications
Class AB Operation for GSM,
DCS, PCS, UMTS, TD-SCDMA,
LTE, and WLAN Transceiver
Applications
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130924
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RF Micro Devices

RFPA3805 Datasheet Preview

RFPA3805 Datasheet

GaAs HBT 2-Stage Power Amplifier

No Preview Available !

RFPA3805
Absolute Maximum Ratings
Parameter
Device Voltage (VCC1, VCC2, VBIAS, VREF1, VREF2)
Device Current Stage 1
Device Current Stage 2
VREF1, VREF2 Current
VREF1, VREF2 Device Voltage
CW Input Power, 50Ω Load, 748MHz Band
CW Input Power, 50Ω Load, 2140MHz and 2640MHz
Bands
Modulated (WCDMA) Input Power, 6:1 Output VSWR,
748MHz Band
Modulated (CDMA) Input Power, 6:1 Output VSWR,
2140MHz and 2640MHz Bands
Operating Temperature Range (TL)
Operating Junction Temperature (TJ)
Max Storage Temperature
ESD Rating Human Body Model (HBM)
Moisture Sensitivity Level
Notes:
1.
2.
3.
The Maximum ratings must all be met simultaneously
PDISS = PDC + PRFIN PROUT
TJ = TL + PDISS * RTH
Rating
6
600
2400
5
4
21
26
13
23
-40 to +85
160
-40 to +150
Class 1C
MSL1
Unit
V
mA
mA
mA
V
dBm
dBm
dBm
dBm
°C
°C
°C
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit Condition
Min Typ Max
728MHz to 768MHz
Frequency
Input Power (PIN)
Gain
Output IP3
ACPR
P1dB
Input Return Loss
Output Return Loss
Noise Figure
748
33.4
46.8
-63.5
34.4
-18
-13
4.6
VCC1 = VCC2 = VBIAS = 5.0V, VREF1 = VREF2 = 5.0V, Temp
= 25°C, optimized for -60dBc ACPR at rated power
MHz
2 dBm Max recommended continuous input power, load VSWR = 2:1
dB
dB 19dBm per tone, 1MHz spacing, optimized for best ACPR
-55
dBc
RF output power = 21dBm, WCDMA 3GPP 3.5, test model 1, 64
DPCH
dBm
dB
dB
dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130924
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 24


Part Number RFPA3805
Description GaAs HBT 2-Stage Power Amplifier
Maker RF Micro Devices
Total Page 24 Pages
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