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RFPA5026 Datasheet class AB Heterojunction Bipolar Transistor (HBT) power amplifier

Manufacturer: RF Micro Devices (now Qorvo)

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General Description

RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands.

Overview

RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.

Key Features

  • P1dB=33dBm at 5V.
  • 802.11g 54Mb/s Class AB Performance.
  • POUT=25dBm at 2.5% EVM, VCC 5V, 680mA.
  • On-Chip Output Power Detector.
  • Input Prematched Input and Output.
  • Proprietary Low Thermal Resistance Package.
  • Power Up/Down control.

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