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RF Micro Devices

RFPD2930 Datasheet Preview

RFPD2930 Datasheet

Hybrid Power Doubler amplifier module

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RFPD2930
GaAs/GaN Power Doubler Hybrid
45MHz to 1003MHz
The RFPD2930 is a Hybrid Power Doubler amplifier module.
The part employs GaAs pHEMT die and GaN HEMT die, has
extremely high output capability, and is operated from 45MHz
to 1003MHz. It provides excellent linearity and superior return
loss performance with low noise and optimal reliability. DC
current of the device can be externally adjusted for optimum
distortion performance versus power consumption over a wide
range of output level.
RFPD2930
Package: SOT-115J
Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under All
Terminations
Extremely High Output Capability
24.5dB Min. Gain at 1003MHz
450mA Max. at 24VDC
Extra Pin For Current Adjustment
Ordering Information
RFPD2930
Box with 50 Pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Applications
45MHz to 1003MHz CATV
Amplifier Systems
Rating
60
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS140226
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RF Micro Devices

RFPD2930 Datasheet Preview

RFPD2930 Datasheet

Hybrid Power Doubler amplifier module

No Preview Available !

RFPD2930
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC set > 370mA
Power Gain
Slope[1]
23.3
23.8 24.3 dB f = 45MHz
24.5
25.0 26.0 dB f = 1003MHz
0.5 1.0 2.0 dB f = 45MHz to 1003MHz
Flatness of Frequency Response
0.8 dB f = 45MHz to 1003MHz
-20 dB f = 45MHz to 320MHz
Input Return Loss
-19 dB f = 320MHz to 640MHz
-18 dB f = 640MHz to 870MHz
-16 dB f = 870MHz to 1003MHz
-20 dB f = 45MHz to 320MHz
-19 dB f = 320MHz to 640MHz
Output Return Loss
-18 dB f = 640MHz to 870MHz
-17 dB f = 870MHz to 1003MHz
Noise Figure
3.0 4.0 dB f = 50MHz to 1003MHz
Total Current Consumption (DC)
Distortion Data
430.0
450.0 mA [2]
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC = IDC typical [2]
CTB
-77 -74 dBc
XMOD
CSO
-71 -68 dBc VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog
-71 -68 dBc channels plus 75 digital channels (-6dB offset)[3]
CIN
Distortion Data
63 66
dB
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC = 370mA
CTB
-70 dBc
XMOD
CSO
-65 dBc VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog
-71 dBc channels plus 75 digital channels (-6dB offset)[3]
CIN 61 dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. Test condition: Pin 4 not connected.
3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the
carrier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140226
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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Part Number RFPD2930
Description Hybrid Power Doubler amplifier module
Maker RF Micro Devices
Total Page 5 Pages
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