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RF Micro Devices

RFVC1832A Datasheet Preview

RFVC1832A Datasheet

InGaP MMIC VCO

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RFVC1832A
7.8GHz to
8.9GHz MMIC
RFVC1832AVCOWITH
7.8GHz TO 8.9GHz MMIC VCO WITH
Fo/2 AND Fo/4 OUTPUTS
Package: Plastic QFN, 32pin, 5mmx5mmx0.85mm
Features
Multiple Frequency Outputs
Fo: 7.80GHz to 8.90GHz
Fo/2: 3.90GHz to 4.40GHz
Fo/4: 1.95GHz to 2.20GHz
No External Resonator
Required
Integrated Frequency Divider
Phase Noise: -115dBc/Hz at
100kHz Offset
Flat Output Power Over
Frequency Tuning Range 1.5V
to 14.5V
Fo: 9dBm
Fo/2: 5dBm
Fo/4: -2dBm
Low Power Consumption
5V/240mA (Divider On)
5V/180mA (Divider Off)
32-Lead 5mmx5mm Plastic
Overmolded QFN
Applications
Point-to-Point Radio
Point-to-Multipoint Radio
Satellite Communications
Test Equipment
Military
Aerospace
Functional Block Diagram
Product Description
RFMD's RFVC1832A is a 5V InGaP MMIC VCO with an integrated frequency divider
providing additional Fo/2 and Fo/4 outputs. With an Fo frequency range of 7.8GHz
to 8.9GHz its monolithic structure provides excellent temperature, shock, and vibra-
tion performance. Output power (Fo) is +9dBm and is flat across the tuning voltage
range of 1.5V to 14.5V. Phase noise is typically -115dBc/Hz at 100kHz offset. The
device operates from a low supply current of 240mA which can be further reduced
to 180mA by disabling the divider functions if not required. The RFVC1832A is
available in a low cost 5mmx5mm surface mount plastic overmolded QFN outline.
Ordering Information
RFVC1832AS2
RFVC1832ASB
RFVC1832ASQ
RFVC1832ASR
RFVC1832ATR7
RFVC1832APCBA-410
Sample bag with 2 pieces
Sample bag with 5 pieces
Bag with 25 pieces
Bag with 100 pieces
7” Reel with 750 pieces
Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
DS120518
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 9




RF Micro Devices

RFVC1832A Datasheet Preview

RFVC1832A Datasheet

InGaP MMIC VCO

No Preview Available !

RFVC1832A
Absolute Maximum Ratings
Parameter
VCC_OSC, VCC_DIG
VTUNE
Junction Temperature (TJ)
Continuous PDISS (TA = 85°C)
(derate 37mW/°C above TA = 85°C)
Junction to Case,
Thermal Resistance (Rθ(j-a) )
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
Rating
+5.5
0 to +15
135
1.65
30
-65 to +150
-40 to +85
Class 1A
Unit
V
V
°C
W
°C/W
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Electrical Specifications
Operating Frequency
Fo
Fo/2
Fo/4
Output Power
Fo
Fo/2
Fo/4
SSB Phase Noise
10kHz offset at RFOUT
100kHz offset at RFOUT
Tune Voltage
Supply Voltage (Oscillator and
Divider)
Supply Current
VCC_OSC
VCC_DIG
Tune Port Leakage Current
Output Return Loss
Harmonics/Sub-harmonics
1/2
3/2
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing
Frequency Drift Rate
Specification
Min. Typ. Max.
7.80
3.90
1.95
1.5
9
5
-2
-90
-115
5
8.90
4.40
2.20
14.5
Unit
Condition
VCC=5V, TA=+25 °C
GHz
GHz
GHz
dBm
dBm
dBm
dBc/Hz
dBc/Hz
V
V
VTUNE = 5 V
VTUNE = 5 V
180 mA
60 mA
10 A
6 dB
Measured with RF probes at package, not at
SMA connections on EVB
45 dBc
45 dBc
15 dBc
25 dBc
5 MHz pp
21 MHz/V
0.8 MHz/°C
2 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120518


Part Number RFVC1832A
Description InGaP MMIC VCO
Maker RF Micro Devices
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RFVC1832A Datasheet PDF






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