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SGA9189Z Datasheet Preview

SGA9189Z Datasheet

Medium Power Discrete SiGe Transistor

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SGA9189Z
Medium Power
Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Typical Gmax, OIP3, P1dB @ 5V,180mA
25 44
23
OIP3
42
21 40
19 38
17
Gmax
15
36
34
13 32
11 30
9
P1dB
28
7 26
5 24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Features
50MHz to 3000MHz Operation
39dBm Output IP3 Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P1dB Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Cost-Effective
3V to 5V Operation
Applications
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 Contains Detailed Appli-
cation Circuits
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Min.
17.5
11.2
23.5
Specification
Typ.
20.5
13.2
19.0
12.2
40
25.5
40.0
Max.
20.5
13.2
36.5
39.0
Noise Figure
2.1
2.6
DC Current Gain
100 180 300
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
7.5 8.5
47
5.5
Operating Current
155 180 195
Test Conditions: VCE = 5V, ICQ = 180mA (unless otherwise noted), TL = 25°C.
[1] 100% Tested [2] Sample Tested
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, ZS = ZS*, ZL = ZL*
1960MHz
900MHz [1], ZS = ZSOPT, ZL = ZLOPT
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT, POUT = +10dBm
per tone
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
DS121018
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 5




RF Micro Devices

SGA9189Z Datasheet Preview

SGA9189Z Datasheet

Medium Power Discrete SiGe Transistor

No Preview Available !

SGA9189Z
Absolute Maximum Ratings
Parameter
Max Base Current (IB)
Max Device Current (ICE)
Max Collector-Emitter Voltage (VCEO)
Max Collector-Base Voltage (VCBO)
Max Emitter-Base Voltage (VEBO)
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
Rating
5
200
7
20
4.8
+150
See Graph
+150
Unit
mA
mA
V
V
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
*Note: Load condition1, ZL = 50.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Typical Performance with Engineering Application Circuit
Freq VCE
ICQ P1dB OIP31 Gain S11
S22
NF
ZSOPT
(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)
()
945
5
184
25.8
39.5
18.8
-14
-26
2.1 6.8 -j0.85
1960
5
179
25.5
40.0
12.2
-23
-21
2.4 7.6 - j11.2
2140
5
180
25.4
39.0
11.3
-20
-14
2.6 18.1 + j3.4
2440
5
180 25.4 40.0 10.2
-20
-17
2.7 5.6 - j15.1
1 POUT = +10dBm per tone for VCE = 5V, 1MHz tone spacing
ZLOPT
()
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
Typical Performance with Engineering Application Circuit
Freq VCE
ICQ P1dB OIP32 Gain S11
S22
NF
ZSOPT
(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)
()
ZLOPT
()
945
3
165 22.1 34.3 17.7
-18
-11
2.1
9.6 - j1.6
11.0 + j1.4
1960
3
162
22.4
35.0
11.8
-18
-16
2.2
7.8 - j13.1
19.3 - j2.9
2440
3
165
23.2
35.3
9.9
-20
-15
2.6
8.1 - j16.0
21.0 - j6.5
2 POUT = +6dBm per tone for VCE = 3V, 1MHz tone spacing
Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica-
tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or
call your local sales representative.
Maximum Recommended Operational
Dissipated Power
1.20
1.00
0.80
0.60
0.40
0.20
Operational Limit (Tj<130C)
0.00
-40
-10 20 50 80
Lead Temperature (C)
110 140
B
ZSOPT
C
ZLOPT
E
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121018


Part Number SGA9189Z
Description Medium Power Discrete SiGe Transistor
Maker RF Micro Devices
Total Page 5 Pages
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