SGA9189Z Datasheet | RF Micro Devices

Description RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39d Bm, and P1d B = 25.5d Bm. This RF device is based on a silicon germanium heterostructure bipolar transistor (Si Ge HBT) process. The SGA9189Z is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Optimum Technology Matching® Applied Gmax (d B) OIP3, P1d B (d Bm) Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS - Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS Typical Gmax, OIP3, P1d B @ 5V,180m A 25 44 OIP3 21 40 19 38 Gmax 36 34 13 32 11 30 P1d B 7 26 5 24 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) Features - 50MHz to 3000MHz Operation - 39d Bm Output IP3 Typ. at 1.96GHz - 12.2d B Gain Typ. at 1.96GHz - 25.5d Bm P1d B Typ. at 1.96GHz - 2.1d B NF Typ. at 0.9GHz - Cost-Effective - 3V to 5V Operation Applications - Wireless Infrastructure Driver Amplifiers - CATV Amplifiers - Wireless Data, WLL...