RF Micro Devices

SGA9189Z Datasheet Preview

SGA9189Z Datasheet

Medium Power Discrete SiGe Transistor

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SGA9189Z

Medium Power

Discrete SiGe

Transistor

SGA9189Z

Medium Power Discrete SiGe Transistor

Package: SOT-89

Product Description

RFMD’s SGA9189Z is a high performance transistor designed for operation to

3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This

RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe

HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-

ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.

The matte tin finish on the lead-free package utilizes a post annealing process to

mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.

This package is also manufactured with green molding compounds that contain no

antimony trioxide nor halogenated fire retardants.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

 SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Typical Gmax, OIP3, P1dB @ 5V,180mA

25 44

OIP3

21 40

19 38

Gmax

13 32

11 30

P1dB

7 26

5 24

0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5

Frequency (GHz)

Features

 50MHz to 3000MHz Operation

 39dBm Output IP3 Typ. at

1.96GHz

 12.2dB Gain Typ. at 1.96GHz

 25.5dBm P1dB Typ. at 1.96GHz

 2.1dB NF Typ. at 0.9GHz

 Cost-Effective

 3V to 5V Operation

Applications

 Wireless Infrastructure Driver

Amplifiers

 CATV Amplifiers

 Wireless Data, WLL Amplifiers

 AN-021 Contains Detailed Appli-

cation Circuits

Parameter

Maximum Available Gain

Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Min.

17.5

11.2

23.5

Specification

Typ.

20.5

13.2

19.0

12.2

25.5

40.0

Max.

20.5

13.2

36.5

39.0

Noise Figure

2.1

2.6

DC Current Gain

100 180 300

Breakdown Voltage

Thermal Resistance

Device Operating Voltage

7.5 8.5

5.5

Operating Current

155 180 195

Test Conditions: VCE = 5V, ICQ = 180mA (unless otherwise noted), TL = 25°C.

[1] 100% Tested [2] Sample Tested

Unit

dBm

°C/W

Condition

900MHz, ZS = ZS*, ZL = ZL*

1960MHz

900MHz [1], ZS = ZSOPT, ZL = ZLOPT

1960MHz [2]

900MHz, ZS = ZSOPT, ZL = ZLOPT

1960MHz [2]

900MHz, ZS = ZSOPT, ZL = ZLOPT, POUT = +10dBm

per tone

1960MHz [2]

900MHz, ZS = ZSOPT, ZL = ZLOPT

1960MHz

collector - emitter

junction - lead

collector - emitter

DS121018

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SGA9189Z Datasheet Preview

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Medium Power Discrete SiGe Transistor

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SGA9189Z

Absolute Maximum Ratings

Parameter

Max Base Current (IB)

Max Device Current (ICE)

Max Collector-Emitter Voltage (VCEO)

Max Collector-Base Voltage (VCBO)

Max Emitter-Base Voltage (VEBO)

Max Junction Temp (TJ)

Operating Temp Range (TL)

Max Storage Temp

Rating

200

4.8

+150

See Graph

+150

Unit

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

*Note: Load condition1, ZL = 50.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD

Typical Performance with Engineering Application Circuit

Freq VCE

ICQ P1dB OIP31 Gain S11

S22

ZSOPT

(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)

()

945

184

25.8

39.5

18.8

-14

-26

2.1 6.8 -j0.85

1960

179

25.5

40.0

12.2

-23

-21

2.4 7.6 - j11.2

2140

180

25.4

39.0

11.3

-20

-14

2.6 18.1 + j3.4

2440

180 25.4 40.0 10.2

-20

-17

2.7 5.6 - j15.1

1 POUT = +10dBm per tone for VCE = 5V, 1MHz tone spacing

ZLOPT

()

16 + j5.9

22.8 + j0.7

23.8 - j9.0

23.1 - j2.7

Typical Performance with Engineering Application Circuit

Freq VCE

ICQ P1dB OIP32 Gain S11

S22

ZSOPT

(MHz) (V) (mA) (dBm) (dBm) (dB) (dB) (dB) (dB)

()

ZLOPT

()

945

165 22.1 34.3 17.7

-18

-11

2.1

9.6 - j1.6

11.0 + j1.4

1960

162

22.4

35.0

11.8

-18

-16

2.2

7.8 - j13.1

19.3 - j2.9

2440

165

23.2

35.3

9.9

-20

-15

2.6

8.1 - j16.0

21.0 - j6.5

2 POUT = +6dBm per tone for VCE = 3V, 1MHz tone spacing

Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica-

tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing

instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or

call your local sales representative.

Maximum Recommended Operational

Dissipated Power

1.20

1.00

0.80

0.60

0.40

0.20

Operational Limit (Tj<130C)

0.00

-40

-10 20 50 80

Lead Temperature (C)

110 140

ZSOPT

ZLOPT

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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS121018

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SGA9189Z Datasheet

Medium Power Discrete SiGe Transistor

SGA9189Z Datasheet

Medium Power Discrete SiGe Transistor

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