SGA9189Z Datasheet - RF Micro Devices

SGA9189Z Medium Power Discrete SiGe Transistor

RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process. The SGA9189Z is cost-effective for applications req.

SGA9189Z Features

* 50MHz to 3000MHz Operation

* 39dBm Output IP3 Typ. at 1.96GHz

* 12.2dB Gain Typ. at 1.96GHz

* 25.5dBm P1dB Typ. at 1.96GHz

* 2.1dB NF Typ. at 0.9GHz

* Cost-Effective

* 3V to 5V Operation Applications

* Wireless Infrastructure Driver Amplifiers

* CATV Amplifiers

SGA9189Z-RFMicroDevices.pdf

SGA9189Z Datasheet Preview — Preview of SGA9189Z PDF

Datasheet Details

Part number:

SGA9189Z

Manufacturer:

RF Micro Devices

File Size:

195.82 KB

Description:

Medium power discrete sige transistor.

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SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor RF Micro Devices

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