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SGB-6433 Datasheet Preview

SGB-6433 Datasheet

DC to 3.5GHz ACTIVE BIAS GAIN BLOCK

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SGB-6433(Z)SGB-6433(Z)
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 5V supply the SGB-6433 does not require a drop resistor as com-
pared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD
rating, low thermal resistance , and unconditional stability. The SGB-6433 product
is designed for high linearity 5V gain block applications that require small size and
minimal external components. It is on chip matched to 50Ω and an external bias
inductor choke is required for the application band.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
NC
NC
RFIN
NC
Active
Bias
NC
NC
RFOUT
NC
Features
„ High Reliability SiGe HBT
Technology
„ Robust Class 1C ESD
„ Simple and Small Size
„ P1dB=18.5dBm at 1950MHz
„ IP3=31dBm at 1950MHz
„ Low Thermal
Resistance = 60 C/W
Applications
„ 5V Applications
„ LO Buffer Amp
„ RF Pre-Driver and RF Receive
Path
Parameter
Specification
Min. Typ.
Small Signal Gain
20.0
14.5
16.0
15.0
Output Power at 1dB Compression
18.5
16.5
18.5
17.5
Output Third Order Intercept Point
33.0
28.5
31.0
31.0
Noise Figure
4.1
Frequency of Operation
DC
Current
76 88
Input Return Loss
12.0
15.0
Output Return Loss
8.5 11.5
Thermal Resistance
60
Test Conditions: Z0=50Ω, VCC=5V, IC=88mA, T=30°C
Max.
17.5
5.1
3500
98
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
mA
dB
dB
°C/W
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Condition
1950 MHz
1950 MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103095 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8




RF Micro Devices

SGB-6433 Datasheet Preview

SGB-6433 Datasheet

DC to 3.5GHz ACTIVE BIAS GAIN BLOCK

No Preview Available !

SGB-6433(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Current (lC total)
Max Device Voltage (VD)
Max RF Input Power
150 mA
6.5 V
20 dBm
Power Dissipation
0.75
W
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
-40 to +150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Detailed Performance Table: VCC=5V, IC=88mA, T=25°C, Z=50Ω
Parameter
Unit 100
MHz
Small Signal Gain (G)
dB 21.2
Output 3rd Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
dBm
dBm
dB 43.6
Output Return Loss (ORL)
dB 15.8
Reverse Isolation (S12)
Noise Figure (NF)
dB 24.4
dB 5.1
Simplified Device Schematic
500
MHz
20.7
34.0
18.9
33.3
13.9
24.6
3.6
16 15 14 13
850
MHz
20.0
33.0
18.5
25.6
12.2
25.0
3.6
1950
MHz
16.0
31.0
18.5
15.0
11.5
24.4
4.1
2400
MHz
15.0
31.0
17.5
13.8
10.2
23.8
4.6
3500
MHz
12.3
9.7
11.3
22.5
5.2
Active
1 Bias 12
2 11
10
3
49
56
78
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-103095 Rev H


Part Number SGB-6433
Description DC to 3.5GHz ACTIVE BIAS GAIN BLOCK
Maker RF Micro Devices
Total Page 8 Pages
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