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SGB2400 - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

Description

RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.

The active bias network provides stable current over temperature and process Beta variations.

The SGB2400 is designed to operate directly from a 3V supply.

Features

  • High Reliability SiGe HBT Technology.
  • Robust Class 1C ESD.
  • P1dB = 6.9dBm at 1950MHz.
  • IP3 = 18.0dBm at 1950MHz.
  • Die Size: 0.75mm x 0.70mm.

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Datasheet preview – SGB2400

Datasheet Details

Part number SGB2400
Manufacturer RF Micro Devices
File Size 113.83 KB
Description DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
Datasheet download datasheet SGB2400 Datasheet
Additional preview pages of the SGB2400 datasheet.

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Full PDF Text Transcription

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SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for high linearity 3V gain block applications that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.
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