SGC4363Z - high performance SiGe HBT MMIC amplifier

RF Micro Devices

General Description

RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network.

The active bias network provides stable current over temperature and process Beta variations.

Key Features

Single Fixed 3V Supply.
No Dropping Resistor Required.
Patented Self-Bias Circuitry.
P1dB=12.4dBm at 1950MHz.
OIP3=26.5dBm at 1950MHz.
Robust 1000V ESD, Class 1C HBM.

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SGC4363Z high performance sige hbt mmic amplifier by RF Micro Devices - Datasheet Preview

Datasheet Details

Part number	SGC4363Z
Manufacturer	RF Micro Devices
File Size	306.39 KB
Description	high performance SiGe HBT MMIC amplifier
Datasheet	SGC4363Z Datasheet

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Full PDF Text Transcription (Reference)

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SGC4363Z 50MHz to 4000 MHz Active Bias Silicon Germanium Cascadable Gain Block SGC4363Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50.