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RF Micro Devices

SGC4363Z Datasheet Preview

SGC4363Z Datasheet

high performance SiGe HBT MMIC amplifier

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SGC4363Z
50MHz to
4000 MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC4363Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 54mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=12.4dBm at 1950MHz
OIP3=26.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain, (G)
15.6
17.1
18.6
dB 850MHz
11.2
12.7
14.2 dB 1950MHz
11.8
dB 2400MHz
Output Power at 1dB Compression
(P1dB)
11.4
13.3
12.4
dBm
dBm
850 MHz
1950 MHz
11.8
dBm
2400 MHz
Output Third Order Intercept Point
(OIP3)
24.5
28.5
26.5
dBm
dBm
850 MHz
1950 MHz
25.5
dBm
2400 MHz
Input Return Loss, (IRL)
9.5 13.5
dB 1950MHz
Output Return Loss, (ORL)
8.5 12.5
dB 1950MHz
Noise Figure (NF)
4.0 5.0 dB 1930MHz
Thermal Resistance
(Junction - Lead) (Rth, j-l)
180 °C/W
Device Operating Voltage, (VD)
3.0 V
Device Operating Current, (ID)
48.0
54.0
60.0
mA
Test Conditions: VD=3V, ID=54mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50, Bias Tee Data
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6




RF Micro Devices

SGC4363Z Datasheet Preview

SGC4363Z Datasheet

high performance SiGe HBT MMIC amplifier

No Preview Available !

SGC4363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
Device Voltage (VCE)
RF Input Power* (See Note)
110 mA
4V
12 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit 100 500 850
MHz MHz MHz
Small Signal Gain (G)
dB 18.0 17.7 17.1
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
dBm 33.5 30.5 28.5
dBm 14.9 14.0 13.3
dB 26.5 21.5 18.5
dB
25.0
21.0
17.5
Reverse Isolation (S12)
dB
20.0
21.0
Noise Figure (NF)
dB 2.9 3.1
Test Conditions: VD=3V ID=54mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50
21.5
3.5
Typical Performance with Bias Tee, VD=3V, ID=54mA
1950
MHz
12.7
26.5
12.4
13.5
12.5
20.0
4.0
2400
MHz
11.8
25.5
11.8
14.0
12.0
19.5
4.2
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
36
17
P1dB vs. Frequency
34
15
32
30 13
28
26
25C
24
-40C
22 85C
11
25C
-40C
9
85C
20
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
7
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
3500
MHz
9.4
22.5
10.0
12.0
11.0
19.0
5.1
3.5
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011


Part Number SGC4363Z
Description high performance SiGe HBT MMIC amplifier
Maker RF Micro Devices
Total Page 6 Pages
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