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SGL0622Z - Low-Noise SiGe HBT MMIC Amplifier

Features

  • High Gain, 28.6 dB at 1575 MHz.
  • Low Noise Figure, 1.4 dB at 1575 MHz.
  • Low Power Consumption 10.5 mA at +3.3 V.
  • Battery Operation:+2.7 V to +3.6 V (Active Bias).
  • Fully Integrated Matching.
  • Class 2 ESD Protection (>2000 V HBM).

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Datasheet Details

Part number SGL0622Z
Manufacturer RF Micro Devices
File Size 504.27 KB
Description Low-Noise SiGe HBT MMIC Amplifier
Datasheet download datasheet SGL0622Z Datasheet
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RFMD + TriQuint = Qorvo SGL0622Z 5 MHz to 4000 MHz, Low-Noise SiGe HBT MMIC Amplifier The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from +2.7 V to +3.6 V. It’s Class-2 ESD protection and high input overdrive capability ensures rugged performance, while its integrated active bias circuit maintains robust stable bias over temperature and process beta variation. The SGL0622Z is internally matched from 5 MHz to 4000 MHz and requires only 4 to 5 external biasing components (DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated using highly repeatable Silicon Germanium technology and is housed in a cost effective RoHS/WEEE compliant 2 x 2 mm DFN package. Functional Block Diagram 8 Pin, 2.0 mm x 2.
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