Datasheet4U Logo Datasheet4U.com

SPF5344Z - GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

Datasheet Summary

Description

The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz.

It offers low noise figure and high linearity in a gain block configuration.

Its single-supply operation and integrated matching networks make implementation remarkably simple.

Features

  • Low Noise Figure=0.80dB at 2.0 GHz.
  • Gain=24.5dB at 2.0GHz.
  • OIP3=39dBm at 2.0GHz.
  • Excellent Return Loss: S11>20dB, S22>20dB at 2.0 GHz.
  • P1dB=22.4dBm at 2.0GHz.
  • Single-Supply Operation: 5V at Idq = 120 mA.
  • Flexible Biasing Options: 3-5V, Adjustable Current.
  • Broadband Internal Matching.

📥 Download Datasheet

Datasheet preview – SPF5344Z

Datasheet Details

Part number SPF5344Z
Manufacturer RF Micro Devices
File Size 330.23 KB
Description GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER
Datasheet download datasheet SPF5344Z Datasheet
Additional preview pages of the SPF5344Z datasheet.

📁 Similar Datasheet

  • SPF5001 - Surface-mount 4-circuit Low-side Switch Array (Sanken electric)
  • SPF5002 - Surface-mount 4-circuit Low-side Switch Array (Sanken electric)
  • SPF5002A - Low-side Switch (Sanken)
  • SPF5003 - High-side Power Switch (Sanken electric)
  • SPF5004 - High-side Power Switch (Sanken electric)
  • SPF5007 - High-side Power Switch (Sanken)
  • SPF5009 - Low-side Switch (Sanken)
  • SPF5012 - Low-side Switch ICs (Sanken Electric)
  • SPF5017 - High-side Power Switch (Sanken)
  • SPF5018 - High-side Power Switch (Sanken)
Other Datasheets by RF Micro Devices
  • SPF5122Z - GaAs pHEMT LOW NOISE MMIC AMPLIFIER

Full PDF Text Transcription

Click to expand full text
SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2Stage Low Noise MMIC Amplifier SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Product Description The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. The off-chip interstage choke and DC block allow for optimum performance tuning. Gain, RL & NF versus Frequency dB Noise Figure (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT  GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 30 S21 20 10 0 NF -10 -20 S11 -30 -40 1.7 1.8 1.9 2.0 2.1 2.
Published: |