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SPF5344Z Datasheet Preview

SPF5344Z Datasheet

GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

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SPF5344Z
0.8GHz to
4GHz, GaAs
pHEMT 2-
Stage Low
Noise MMIC
Amplifier
SPF5344Z
0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW
NOISE MMIC AMPLIFIER
Product Description
The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed
for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in
a gain block configuration. Its single-supply operation and integrated
matching networks make implementation remarkably simple. The off-chip
interstage choke and DC block allow for optimum performance tuning.
Gain, RL & NF versus Frequency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
30
S21
20
10
0
NF
-10
-20 S11
-30
-40
1.7 1.8 1.9 2.0 2.1 2.2
Frequency (GHz)
1.75
Gain
IRL
ORL
NF
1.50
1.25
1.00
0.75
0.50
S22 0.25
0.00
2.3 2.4 2.5
Features
Low Noise Figure=0.80dB at
2.0 GHz
Gain=24.5dB at 2.0GHz
OIP3=39dBm at 2.0GHz
Excellent Return Loss:
S11>20dB, S22>20dB at
2.0 GHz
P1dB=22.4dBm at 2.0GHz
Single-Supply Operation: 5V at
Idq = 120 mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Frequency = 0.9 GHz
Min. Typ. Max.
Frequency = 2.0 GHz
Min. Typ. Max.
Frequency = 2.2 GHz
Min. Typ. Max.
Unit
Small Signal Power Gain
34.5
22.1 24.5 26.9
22.5
dB
Noise Figure
0.70
0.80
0.90
dB
Output Third Order
Intercept Point
35.5
35 39.0
39.0
dBm
Output Power at 1dB
Compression
21.8
22.4
22.7
dBm
Input Return Loss
25.0
dB
Output Return Loss
25.0
dB
Reverse Isolation
32.5
dB
Device Operating Voltage
5.0
5.0
5.0 V
Device Operating Current 100 120 160 100 120 160 100 120 160 mA
(Quiescent)
Thermal Resistance
65
65
65 °C/W
(junction-to-lead)
1st stage
Thermal Resistance
65
65
65 °C/W
(junction-to-lead)
2nd stage
Note: VD=5.0V, IDQ=120mA OIP3 Tone Spacing=1MHz, POUT per tone=0dBm and ZS=ZL=50, 25°C, Application Circuit Data.
The typical noise figure values include evaluation board losses.
Condition
DS110805
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8




RF Micro Devices

SPF5344Z Datasheet Preview

SPF5344Z Datasheet

GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

No Preview Available !

SPF5344Z
Absolute Maximum Ratings
Parameter
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power* (See Note)
Max Dissipated Power
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity (MSL)
*Note: Load condition 1, ZL=50;
Load condition 2, ZL=10:1 VSWR
Rating
220
(100mA 1st stage,
120mA 2nd stage)
5.5
24
1200
150
-40 to + 85
-65 to +150
Class 1B
MSL 1
Unit
mA
V
dBm
mW
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Source Lead Temperature
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance - VD=5.0V (Application Circuit Data)
Frequency (GHz)
Symbol Parameter
Unit 0.8 0.85 0.9 1.8 1.9 2.0 2.1 2.2 2.5
S21
Small Signal Gain
dB
36.5
35.5
34.5
26.0
25.5
24.5
23.5
22.5
20.5
NF Noise Figure dB 0.6 0.7 0.7 0.8 0.8 0.8 0.9 0.9 1.1
OIP3
P1dB
Output IP3
Output P1dB
dBm 35.0 35.5 35.6 39.0 39.0 39.0 39.5 39.0 39.0
dBm 21.5 21.6 21.8 22.6 23.1 22.4 23.0 22.7 22.6
S11 Input Return Loss
dB 17.0 22.0 25.0 22.5 25.0 25.0
S22 Output Return Loss
dB 15.0 19.5 23.5 25.0 25.0 25.0
S12 Reverse Isolation dB 44.0 43.5 43.5 34.0 33.0 32.5
Test Conditions: VD=5.0V, IDQ=120mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50
23.0
25.0
32.0
20.5
25.0
31.0
14.5
25.0
29.5
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110805


Part Number SPF5344Z
Description GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER
Maker RF Micro Devices
Total Page 8 Pages
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