Absolute Maximum Ratings
Total Current (lD)
Device Voltage (VD)
RF Input Power
Storage Temperature Range
-65 to +150
Operating Temperature Range (TL)
-45 to +85
Operating Junction Temperature (TJ)
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Backside of die
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Device Operating Current
Freq = 3 GHz
Freq = 9 GHz
Freq = 18 GHz
Junction to backside
Typical Performance (Circuit Board Data with Bias Tees) VS=5V, RBIAS=33Ω, T=25°C, Z=50Ω
Units 500MHz 3GHz 9GHz 12GHz 15GHz
Small Signal Gain
Output 3rd Order Intercept Point (see
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
dB 5.4 4.6 4.8 4.7 4.8
Note 1: 0dBm/tone, 1MHz tone spacing
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Rev A0 DS090528