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RF Micro Devices

SXE1089Z Datasheet Preview

SXE1089Z Datasheet

high performance pHEMT MMIC amplifier

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SXE1089Z
0.05GHz to
3GHz, Cascad-
able pHEMT
MMIC Ampli-
fier
SXE1089Z
0.05GHz to 3GHz, CASCADABLE pHEMT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing
a patented self-bias Darlington topology housed in a lowcost, surface
mountable SOT-89 package. The active bias network provides stable cur-
rent over temperature and process thereshold voltage variations.
Designed to run directly from a 5V supply, the SXE1089Z does not require
a dropping resistor as compared to typical Darlington amplifiers. The
SXE1089Z product is designed for high linearity 5V gain block applica-
tions that require small size and minimal external com-
Optimum Technology ponents. It is internally matched to 50.
Matching® Applied
GaAs HBT
GaAs MESFET
Gain and Return Loss
T = 25°C
20.0
InGaP HBT
S21
SiGe BiCMOS
Si BiCMOS
10.0
Note: Measured with Bias tees and deembedded to lead of device
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
0.0
-10.0
S22
-20.0
S11
-30.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Excellent ACP -65dBc with 9.5dBm
Channel Power at 2140MHz
OIP3=38.5dBm at 2140MHz
P1dB=22.6dBm at 2140MHz
Gain=11.7dB at 1960MHz
NF=3.2dB at 1960MHz
Single-Supply Operation:5V at
IDQ = 128 mA
Broadband Internal Matching, No
Dropping Resistor
Patented Self-Bias Darlington
Topology
Consistent Current versus Temper-
ature
Insensitive to Process Threshold
Voltage Variation
Applications
PA Driver Amplifier, Multi-Carrier
Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
14.2 dB 880MHz
11.7
dB 1960MHz
9.6 11.1
12.6
dB
2140 MHz
Output Power at 1dB Compression
22.4
dBm
880 MHz
22.9
dBm
1960 MHz
20.7
22.2
dBm
2140 MHz
Output Third Order Intercept Point
38.0
dBm
880MHz, 5dBm per tone, 1MHz spacing,
38.5
dBm 1960MHz, 5dBm per tone, 1MHz spacing,
36.6
38.6
dBm 2140MHz, 5dBm per tone, 1MHz spacing,
IS-95 Channel Power
13.2
dBm 880MHz, -65dBc ACP, tested with 9 Channels
FWD
17.0 dBm 880MHz, -45dBc ACP
WCDMA Channel Power 9.5 dBm 2140MHz, -65dBc ACP, tested with 64 Channels
FWD
14.5
dBm 2140MHz, -45dBc ACP
Input Return Loss
16.0
20.0
dB 2140MHz
Output Return Loss
11.7
15.7
dB 2140MHz
Noise Figure
3.2
4.2 dB
2140 MHz
Device Operating Voltage
5.0
V
Device Operating Current
118 128
138 mA
Thermal Resistance
45.0
°C/W
junction - lead
Test Conditions: VD=5V, IDQ=128mA Typ. , TL=25°C, ZS=ZL=50, Tested with Broadband Application Circuit
DS110610
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10




RF Micro Devices

SXE1089Z Datasheet Preview

SXE1089Z Datasheet

high performance pHEMT MMIC amplifier

No Preview Available !

SXE1089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power* (See Note)
170 mA
5.5 V
25 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1B
Moisture Sensitivity Level
MSL 2
*Note: Load condition ZL=50.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance with Application Circuit at Key Operating Frequencies (with Broadband Application Circuit)
Parameter
Unit 500 880 1570 1960 2140 2440 3000
MHz MHz MHz MHz MHz MHz MHz
Small Signal Gain (S21)
Output Third Order Intercept Point, 5dBm per
tone, 1MHz spacing (OIP3)
Channel Power at -65dBc (ACP1)
Output Power at 1dB Compression (P1dB)
Input Return Loss
Output Return Loss
Reverse Isolation (S12)
Noise Figure (NF)
dB
dBm
dBm
dBm
dB
dB
dB
dB
14.7
38.0
20.6
23.5
9.0
-21.0
3.2
14.2
38.0
13.2
22.4
13.5
13.0
-20.0
3.2
12.6
38.5
23.0
15.5
19.5
-18.5
3.2
11.7
38.5
22.9
19.0
24.0
-18.0
3.2
11.2
38.5
9.5
22.6
21.5
23.0
-17.5
3.2
10.5
38.5
22.3
31.5
18.5
-17.0
3.2
9.1
37.0
21.3
23.0
13.0
-16.0
3.4
Test Conditions: VD=5V IDQ=128mA Typ. ACP1=880MHz tested with IS-95 Ch. FWD
TL=25°C ZS=ZL=502140MHz tested with WCDMA 64 Ch. FWD
Note: OIP3 can be improved to 39-40dBm by lowering the output choke and/or increasing the output DC block. These changes will reduce
P1dB and ACPR.
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110610


Part Number SXE1089Z
Description high performance pHEMT MMIC amplifier
Maker RF Micro Devices
Total Page 10 Pages
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