SZM-2066Z Overview
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g...
SZM-2066Z Key Features
- InGaP HBT
- P1dB= 33.5dBm at 5V
- Three Stages of Gain:37dB
- POUT=26dBm at 2.5% EVM, VCC
- Active Bias with Adjustable Cur
- On-Chip Output Power Detector
- Low Thermal Resistance
- Power Up/Down Control <1s
- Attenuator Step 20dB at
