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RF Micro Devices

SZM-2166Z Datasheet Preview

SZM-2166Z Datasheet

2W POWER AMPLIFIER

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SZM-2166Z
2.3GHz to
2.7GHz 2W
Power Ampli-
SZM-2166Zfier
2.3GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed for
802.16 customer premises equipment (CPE) terminals in the 2.3GHz to 2.7GHz bands. It can
run from a 3V to 6V supply. The external output match and bias adjustability allows load line
optimization for other applications over narrower bands. It features an output power detector,
on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be
utilized by switching the second stage Power up/down control. This product features a RoHS
compliant and Green package with matte finish, designated by the “Z” suffix
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Vcc = 5V
RFIN
Vbias = 5V
Stage 1
Bias
Pow er
Up/Dow n
Control
Stage 2
Bias
Stage 3
Bias
Pow er
Detector
RFOUT
Features
P1dB=35dBm at 6V
Three Stages of Gain: 37dB
802.11g 54Mb/s Class AB Per-
formance
POUT=27dBm at 2.5%EVM, VCC
6V, 878mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control 1s
Attenuator step 20dB at
VPC2 = 0V
Applications
802.16 WiMAX Driver or Output
Stage
802.11b/g WiFi, WiFi
CPE Terminal Applications
Parameter
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
EVM
Min.
2300
34.5
Specification
Typ.
35
36
2.5
Max.
2700
Unit
MHz
dBm
dB
%
Third Order Suppression
-40 -35 dBc
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
10
13
8.3
14
14
dB
dB
dB
Output Voltage Range
0.9 to 1.8
V
Quiescent Current
615 724 832 mA
Power Up Control Current
4 mA
Vcc Leakage Current
100 A
Thermal Resistance
12 °C/W
Test Conditions: 2.5GHz to 2.7GHz App circuit, Z0=50, Vcc=6.0V, Iq=724mA, TBP=30°C
Condition
2.7 GHz
2.7 GHz
27dBm Output power EVM 802.11g 54Mb/s-
2.7 GHz
(POUT=23dBm per tone)-2.7GHz
2.7 GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
POUT=10dBm to 33dBm
Vcc = 6V
Vpc=6V, IVPC1+ IVPC2+IVPC3
Vcc=6V, Vpc=0V
junction - lead
DS110620
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF Micro Devices

SZM-2166Z Datasheet Preview

SZM-2166Z Datasheet

2W POWER AMPLIFIER

No Preview Available !

SZM-2166Z
Absolute Maximum Ratings
Parameter
Rating
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
*****Device Voltage (VD)
Operating Lead Temperature (TL)
****Max CW RF output Power for
50continuous long term opera-
tion
1500
500
150
9.0
-40 to +85
30
mA
mA
mA
V
°C
dBm
Max CW RF Input Power for 50out-
put load
26
dBM
Max CW RF Input Power for 10:1
VSWR FR out load
5 dBm
Max Storage Temperature
-40 to +150
°C
Operating Junction Temperature (TJ)
ESD Human Body Model
+150
Class 1B
°C
Moisture Sensitivity Level
MSL-1
****With specified application circuit
*****No RF Drive
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
ICQVCC<(TJ-TL)/RTH, j-l
Note: ICQ in this equation is for the stage with the highest current
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance with appropriate app circuit (VCC=6V, ICQ=655mA, 802.11g 54Mb/s 64QAM)
Parameter
Unit 2.3 **2.4 ***2.5
GHz1 GHz1 GHz2
Gain at POUT=26dBm
P1dB
EVM% at 27dBm Output Power
Current at POUT 2.5% EVM
Input Return Loss
Output Return Loss
Note 1: Measured with 2.3GHz to 2.4Ghz Application circuit
Note 2: Measured with 2.5GHz to 2.7GHz Application circuit
dB 37.5 37.5 37.5
dBm 34.0 34.0 35.0
% 2.3 2.9 1.7
mA 768 779 900
dB
23.0
21.0
14.0
dB 14.0 11.0 20.0
***2.6
GHz2
37.0
35.0
1.7
889
14.0
25.0
***2.7
GHz2
35.0
35.0
2.5
878
14.0
18.0
2 of 21
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110620


Part Number SZM-2166Z
Description 2W POWER AMPLIFIER
Maker RF Micro Devices
Total Page 21 Pages
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