SZM-2166Z Overview
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is specifically designed for 802.16 customer premises equipment (CPE) terminals in...
SZM-2166Z Key Features
- InGaP HBT
- P1dB=35dBm at 6V
- Three Stages of Gain: 37dB
- POUT=27dBm at 2.5%EVM, VCC
- Active Bias with Adjustable Cur
- On-Chip Output Power Detector
- Low Thermal Resistance
- Power Up/Down Control 1s
- Attenuator step 20dB at
