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RF Micro Devices

SZM-3066Z Datasheet Preview

SZM-3066Z Datasheet

2W POWER AMPLIFIER

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SZM-3066Z
3.3GHz to
3.8GHz 2 W
Power Ampli-
SZM-3066Zfier
3.3GHz to 3.8GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) ampli-
fier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed as a final
or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to
6V supply. The external output match and bias adjustability allows load line optimization for
other applications or over narrower bands. It features an output power detector, on/off power
control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by
switching the second stage Power up/down control. This product features a RoHS compliant
and Green package with matte tin finish, designated by the ‘Z’ suffix.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features
P1dB=33.5dBm at 5V
Three Stages of Gain:34dB
802.11g 54Mb/s Class AB Per-
formance
POUT=26dBm at 2.5% EVM, VCC
5 V,730 mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1μs
Attenuator Step 20dB at
VPC2 = 0 V
Class 1B ESD Rating
Applications
802.16 WiMAX Driver or Output
Stage
Fixed Wireless, WLL
Parameter
Specification
Min. Typ. Max.
Unit
Frequency of Operation
3300
3800
MHz
Output Power at 1dB Compression
33.5
dBm
Gain
32.5
34.0
dBm
Output power
26.0
dBm
Third Order Suppression
-38.0
-33.0
dBc
Noise Figure
5.0 dB
Worst Case Input Return Loss
11.0
14.0
dB
Worst Case Output Return Loss
6.0
9.0
dB
Supply voltage range
3.0 5.0 6.0 V
Output Voltage Range
0.9 to 2.2
V
Quiescent Current
540 600 660 mA
Power Up Control Current
5.0 mA
VCC Leakage Current
0.1 mA
Thermal Resistance
12.0
°C/W
Test Conditions: 3.3GHz to 3.8GHz App circuit, Z0=50Ω, VCC=5V, IQ=600mA, TBP=30°C
Condition
3.5 GHz
@ POUT=26dBm-3.5GHz
@ 2.5% EVM 802.11g 54Mb/s - 3.5GHz
POUT=23dBm per tone - 3.5GHz
@ 3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.8GHz
for POUT=10dBm to 30dBm
VCC = 5 V
VPC= 5V, IVPC1 + IVPC2+ IVPC3
VCC=5V, VPC=0V
junction - lead
DS131017
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF Micro Devices

SZM-3066Z Datasheet Preview

SZM-3066Z Datasheet

2W POWER AMPLIFIER

No Preview Available !

SZM-3066Z
Absolute Maximum Ratings
Parameter
Rating
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
*Device Voltage (VD)
Power Dissipation
1500
600
300
9.0
6
mA
mA
mA
V
W
**Max RF output Power for 50Ω con-
tinuous long term operation
30
dBm
Max RF Input Power for 10:1 VSWR
output load
5
dBm
Storage Temperature Range
-40 to +150
°C
Operating Temp Range (TL)
ESD Rating - Human Body Model
-40 to +85
500
°C
V
Maximum Junction Temperature for
long term reliability, Tj Max
150
°C
*Note: No RF Drive
**Note: With specified application circuit
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Ca u t io n! ESD sensitive de vice.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical
performance or functional operation of the device under Absolute Maximum Rating
conditions is not implied.
RoHS status based on EU Directive 201 1/65/EU (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However,
no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for
any infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
Typical Performance 3.3Ghz to 3.8GHz App Circuit (VCC=5V, ICQ=600mA, 802.11g 54mb/s 64QAM)
Parameter
Units 3.3GHz 3.4Ghz 3.5GHz 3.6GHz
Gain @ POUT=26dBm
P1dB
dB
dBm
35.2
34.4
35.2
34.3
35.2
34.3
34.5
34.1
POUT @ 2.5% EVM
Current @POUT 2.5% EVM
Input Return Loss
dBm
mA
dB
26.5
769
14
26.5
769
17
26.5
752
19
26.5
750
21
Output Return Loss
dB 10.0 10.5 10.0 9.0
Step Attenuation (VPC2=0V)
dB
23.0
22.0
22.0
21.0
3.7 GHz
32.8
33.9
26.0
750
19
9.0
18.0
3.8 GHz
30.0
33.0
26.0
720
16
8.0
15.0
Simplified Device Schematic
40
GND 1
VC1
VBIAS12
NC
NC
RFIN
NC
VPC1
VPC2
GND 10
11
31
30 GND
NC
RFOUT
RFOUT
RFOUT
RFOUT
RFOUT
RFOUT
NC
21 GND
20
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS131017


Part Number SZM-3066Z
Description 2W POWER AMPLIFIER
Maker RF Micro Devices
Total Page 12 Pages
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