• Part: RF3133
  • Description: QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
  • Manufacturer: RF Monolithics
  • Size: 233.61 KB
Download RF3133 Datasheet PDF
RF Monolithics
RF3133
RF3133 is QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE manufactured by RF Monolithics.
.. Typical Applications - 3V Quad-Band GSM Handsets - mercial and Consumer Systems - Portable Battery-Powered Equipment Product Description The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50 Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz, and 1850MHz to 1910MHz bands. On-board power control provides over 37d B of control range with an analog voltage input; and, power down with a logic “low” for standby operation. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT 1.10 TYP 1.70 TYP 2.50 TYP 3.10 TYP 3.90 TYP 4.60 TYP 5.40 TYP 6.10 TYP 0.10 TYP 6.90 TYP 1 8.40 TYP 7.60 TYP 6.00 5.40 TYP 4.60 TYP 4.00 2.40 TYP 1.60 TYP QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE - GSM850, EGSM900, DCS/PCS Products - GPRS Class 12 patible 1.40 1.25 1 9.90 TYP 9.10 TYP 8.50 6.90 TYP 6.10 TYP 3.90 TYP 3.10 TYP 1.50 0.90 TYP 0.10 TYP 0.00 10.00 ± 0.10 7.00 ± 0.10 NOTES: 0.450 ± 0.075 Shaded areas represent pin 1 location. ! Package Style: Module Ga As HBT Si Ge HBT Ga N HEMT !Si CMOS Ga As MESFET Features - plete Power Control Solution - Single 2.9V to 5.5V Supply Voltage - +35d Bm GSM Output Power at 3.5V - +33d Bm DCS/PCS Output Power at 3.5V - 55% GSM and 52% DCS/PCS ηEFF Si Ge...