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Rohm Semiconductor Electronic Components Datasheet

2SA1577FRA Datasheet

Medium Power Transistor

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Medium Power Transistor (-32V, -05A) AEC-Q101 Qualified
2SA1577FRA
Features
1) Large IC.
ICMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage operation.
3) Complements the 2SSCC44009977F.RA
Structure
Epitaxial planer type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
PC MAX. must not be exceeded.
Tstg
Limits
40
32
5
0.5
0.2
150
55 to +150
Unit
V
V
V
A
W
°C
°C
Dimensions (Unit : mm)
22SSAA11557777FRA
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
(3)
0.3 +−00.1
All terminals have
same dimensions
00.1
0.15±0.05
(1) Emitter
ROHM : UMT3
EIAJ : SC-70
(2) Base
(3) Collector
Abbreviated symbol: H
Denotes hFE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector outoff current
ICBO
Rmitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
40
32
5
120
Typ.
200
7
Max.
1
1
0.6
390
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC= 100μA
IC= 1mA
IE= 100μA
VCB= 20V
VEB= 4V
IC/IB= 300mA/30mA
VCE= 3V, IC= 100mA
VCE= 5V, IE=20mA, f=100MHz
VCB= 10V, IE=0A, f=1MHz
Packaging specifications
Package
Code
Type
hFE Basic ordering unit (pieces)
22SSA1A517577F7RA QR
Taping
T106
3000
hFE values are classifies as follows.
Item
Q
R
hFE 120 to 270 180 to 390
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

2SA1577FRA Datasheet

Medium Power Transistor

No Preview Available !

2SA1577FRA
Electrical characteristic curves
-500
-200 Ta=100°C
25 °C
-100 55°C
-50
VCE=3V
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
1000
500
200
100
50
Ta=25 C
VCE=-5V
-3V
-1V
20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
-1.0 lC/lB=10
-0.5
-0.3
-0.2
-0.1
Ta=100 C
25 C
-0.05 -55 C
-0.03
-0.02
-0.01
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Data Sheet
-100
Ta=25 C
-1mA
-80
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-60
-0.5mA
-0.4mA
-40
-0.3mA
-20 -0.2mA
-0.1mA
0 IB=0A
0 -1 -2 -3 -4 -5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
1000
500
200
100
50
Ta=100 C
25 C
-55 C
VCE=-3V
20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
Ta=25 C
VCE=-5V
1000
500
200
100
50
0.5 1 2
5 10 20
EMITTER CURRENT : IE (mA)
50
Fig.8 Gain bandwidth product vs.
emitter current
-500
Ta=25 C
-400 -5.0mA
-4.5mA
-4.0mA
-3.5mA
-300 -3.0mA
-2.5mA
-2.0mA
-200
-1.5mA
-1.0mA
-100
-0.5mA
0 IB=0A
0 -5 -10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output
characteristics ( ΙΙ )
Ta=25 C
-1
-0.5
-0.2
-0.1 IC/IB=50
-0.05 20
10
-0.02
-1 -2 -5 -10 -20 -50 -100 -200 -500
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector emitter saturation
voltage vs. collector current ( Ι )
Ta=25 C
f=1MHz
IE=0A
100 IC=0A
50
20
10
5
2
-0.5 -1 -2
-5 -10 -20
-50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev .B


Part Number 2SA1577FRA
Description Medium Power Transistor
Maker ROHM
Total Page 5 Pages
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