2SCR574D3 FRA
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
80
80
6
2
4
10
150
-55 to +150
Unit
V
V
V
A
A
W
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown voltage BVCBO IC = 100μA
80 -
-
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
80 -
-
Emitter-base breakdown voltage BVEBO IE = 100μA
6- -
Collector cut-off current
ICBO VCB = 80V
- -1
Emitter cut-off current
IEBO VEB = 4V
- -1
Collector-emitter saturation voltage
VCE(sat) IC = 1A, IB = 50mA
- 100 300
DC current gain
hFE VCE = 3V, IC = 100mA 120 - 390
Transition frequency
f
*3
T
VCE = 10V, IE = -500mA,
f = 100MHz
-
280
-
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
- 20 -
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
*1 Pw=10ms Single Pulse
*2 Tc=25℃
*3 Pulsed
ton IC = 1A,
IB1 = 100mA,
tstg
IB2 = -100mA,
VCC ⋍ 10V,
RL = 10Ω
tf See test circuit
- 90 -
- 600 -
- 150 -
ns
ns
ns
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