2SCR587D3
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
120
120
6
3
6
10
150
-55 to +150
Unit
V
V
V
A
A
W
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC = 100μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 100μA
Collector cut-off current
ICBO VCB = 100V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage
VCE(sat) IC = 1A, IB = 100mA
DC current gain
hFE VCE = 5V, IC = 100mA
Transition frequency
f
*3
T
VCE = 10V, IE = -1A,
f = 100MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
*1 Pw=10ms Single Pulse
*2 Tc=25℃
*3 Pulsed
Values
Min. Typ. Max.
120 -
-
120 -
-
6- -
- -1
- -1
- 60 120
120 - 390
Unit
V
V
V
μA
μA
mV
-
- 250 - MHz
- 35 - pF
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20190527 - Rev.002
