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Rohm Semiconductor Electronic Components Datasheet

B1236 Datasheet

Power Transistor

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Transistors
Power Transistor (120V, 1.5A)
2SB1236
2SB1236
zFeatures
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V)
3) High transition frequency. (fT = 50MHz)
4) Complements the 2SD1857.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
120
Collector-emitter voltage
VCEO
120
Emitter-base voltage
VEBO
5
Collector current
1.5
IC
3
Collector power dissipation
PC
1
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
1 Single pulse Pw = 100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (DC)
A (Pulse) 1
W 2
°C
°C
zExternal dimensions (Unit : mm)
6.8 2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1236
ATV
QR
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
120
120
5
120
Typ.
50
30
Max.
1
1
2
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC = 50µA
ICv = 1mA
IE = 50µA
VCB = 100V
VEB = 4V
IC/IB = 1A/0.1A
VCE = 5V , IC = 0.1A
VCE = 5V , IE = 0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

B1236 Datasheet

Power Transistor

No Preview Available !

Transistors
2SB1236
zElectrical characteristics curves
1.0
Ta=25°C
0.8
10mA
9mA
0.6 8mA
PC=1W
0.4
0.2
7mA
6mA
5mA
4mA
3mA
2mA
0
IB= 0mA
1mA
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
10
VCE= −5V
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagetion characteristics
1000
Ta=25°C
500
200
100 VCE= 10V
50
20 5V
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( )
1000
500
200 Ta=100°C
100
25°C
50 25°C
20
10
5
VCE= 5V
10
5
2
1
0.5
IC/IB=50
0.2
20
0.1
10
0.05
Ta=25°C
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
IC/IB=10
5
2
1 Ta= −25°C
25°C
0.5
100°C
VBE(sat)
0.2
Ta=100°C
0.1
0.05
25°C
25°C
VCE(sat)
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-emitter
Base-emitter
saturation
saturation
voltage
voltage
vs.collector
current
1000
VCE= 5V
500 Ta=25°C
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
1000 f=1MHz
500
IE=0A
Ta=25°C
200
100
50
20
10
5
2
1
0.1 0.2
0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
10
5 ICMAX(PULSE)
2
1
0.5
0.2 DC
0.1
0.05
0.02
0.01
0.005
Ta=25°C
SINGLE
0.002
0.001
NONREPETITIVE
PULSE
0.1 0.2 0.5 1 2 5
10 20
50 100 200
500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.A
2/2


Part Number B1236
Description Power Transistor
Maker ROHM
Total Page 3 Pages
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