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Transistors
Power Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage Collector-emitter voltage
VCBO VCEO
−100 −100
Emitter-base voltage
Collector current
Collector 2SB1580 power dissipation 2SB1316
VEBO IC
PC
−8 −2 −3 2 1 10
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.