BD2265G-M Datasheet PDF | ROHM Semiconductor

ROHM Semiconductor BD2265G-M

This product has not designed protection against radioactive rays 1/34 TSZ02201-0R5R0H300010-1-2 03.Feb.2014 Rev.001 BD226xG-M Series Block Diagram IN Datasheet OUT Pin Configurations TOP VIEW 1 IN 2 GND 3 EN,/EN OUT 5 /OC 4 Pin Description Pin No.

Part No.	BD2265G-M
Datasheet	BD2265G-M Download
Manufacturer	ROHM Semiconductor
Description	Current Limit High-Side Switch
Buy	Stock & Price

GENERAL DESCRIPTION

BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.

FEATURES

AEC-Q100 Qualified Over Current Protection 0.3A: BD2262G-M 0.76A: BD2264G-M / BD2265G-M 0.97A: BD2266G-M / BD2267G-M Built-in Low ON-Resistance (Typ 120mΩ) N-Channel MOSFET Reverse Current Protection when Power Switch Off Thermal Shutdown Under-Voltage Lockout Open-Drain Error Flag Output Output Discharge Function Soft Start Circuit Control Input Logic Active-High: BD2262G-M /BD2264G-M /BD2266G-M Active-Low: BD2265G-M /BD2267G-M Key Specifications Input Voltage Range: 2.7V to 5.5V ON-Resistance: 120mΩ(Typ) Over-Current Threshold: 0.3A, 0.76A, 0.97A Standby Current: 0.01µA (Typ) Operating Temperature Range: -40°C to +85°C Package W(Typ) D(Typ) H(Max) SSOP5 2.90mm x 2.80mm x 1.25mm

APPLICATIONS

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