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Rohm Semiconductor Electronic Components Datasheet

DTA123TUA Datasheet

PNP Transistor

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DTA123T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
VCEO
IC
R
Value
-50V
-100mA
2.2kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary NPN Types: DTC123TM series
lOutline
SOT-723
SOT-323
 
DTA123TM
(VMT3)
 
DTA123TUA
(UMT3)
lApplication
INVERTER, INTERFACE,DRIVER
lInner circuit
DTA123TM
DTA123TUA
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA123TM
SOT-723
(VMT3)
1212
T2L
180
8
8000
92
DTA123TUA
SOT-323
(UMT3)
2021
T106
180
8
3000
92
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/5
20180629 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

DTA123TUA Datasheet

PNP Transistor

No Preview Available !

DTA123T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DTA123TM
DTA123TUA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -500 nA
- - -500 nA
- - -300 mV
100 250 600 -
1.54 2.2 2.86 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20180629 - Rev.001


Part Number DTA123TUA
Description PNP Transistor
Maker ROHM
Total Page 8 Pages
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