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MG6307WZ - Insulated Gate Bipolar Transistor

Datasheet Summary

Features

  • 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching l.

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Datasheet Details

Part number MG6307WZ
Manufacturer ROHM
File Size 455.40 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MG6307WZ Datasheet
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Full PDF Text Transcription

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MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 25A 1.5V 1328pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching lApplication PFC UPS Welding Solar Inverter IH lOutline Wafer lInner Circuit (2) (1) (3) lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Collector (3) Emitter Value 650 ±30 *1) 100 -40 to +175 Unit V V A A °C www.rohm.
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