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Rohm Semiconductor Electronic Components Datasheet

MH2201WZ Datasheet

Fast Recovery Diode

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MH2201WZ
1200V 25A Fast Recovery Diode
VRM
IF (Nominal)
VF (Typ.)
Max. Possible Chips per Wafer
lFeatures
1) Light Punch Through Type
2) Low Forward Voltage
3) Very Fast & Soft Recovery
4) Low Recovery Loss
1200V
25A
1.65V
990pcs
lApplication
Free Wheeling
lOutline
Wafer
lInner Circuit
(1)
(2)
Datasheet
(1) Anode
(2) Cathode
lAbsolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage, Tj = 25°C
Forward Current
Pulsed Forward Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VRM
IF*1
IFP*2
Tj
Value
1200
*1)
75
-40 to +175
Unit
V
A
A
°C
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Breakdown Voltage
BV IR = 10μA
1200
-
-V
Reverse Current
IR VR = 1200V
Forward Voltage
IF = 25A,
VF*3 Tj = 25°C
Tj = 175°C
*3 Design assurance without measurement
- - 10 μA
- 1.65 2.1 V
- 1.85 -
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/2
2019.08 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

MH2201WZ Datasheet

Fast Recovery Diode

No Preview Available !

MH2201WZ
lChip Information
Datasheet
2704
498 3700
3800
0.10±0.03
3.80
Unitmm
Unit : μm
: Pad Area
: Anode Bonding Pad
Backside : Cathode
Wafer Size
150mm
Wafer Thickness
0.12±0.01mm
Chip Size
3.80mm×3.80mm
Cut Line Width
0.10±0.03mm
Top Side Metallization
AlSiCu:5.0μm
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation
Polyimide
lFurther Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGS50TSX2D
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/2
2019.08 - Rev.A


Part Number MH2201WZ
Description Fast Recovery Diode
Maker ROHM
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MH2201WZ Datasheet PDF






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