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R6006KND3
Nch 600V 6A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 830mΩ
±6A 70W
lFeatures
1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-252
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6006K
Basic ordering unit (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
600
V
±6
A
±18
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS*3
1.
R6006KND3 Datasheet
