R6006KND3
Nch 600V 6A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
830mΩ
±6A
70W
lFeatures
1) Low on-resistance
2) Ultra fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-252
lInner circuit
Datasheet
lApplication
Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6006K
Basic ordering unit (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
V
±6
A
±18
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS*3
1.1
A
Avalanche energy, single pulse
EAS*3
65
mJ
Power dissipation (Tc = 25°C)
PD
70
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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