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Rohm Semiconductor Electronic Components Datasheet

R6020FNJ Datasheet

Power MOSFET

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R6020FNJ
  Nch 600V 20A Power MOSFET
   Datasheet
VDSS
600V
lOutline
TO-263
 
RDS(on)(Max.)
0.28Ω
SC-83
ID
±20A
LPT(S)
PD
304W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R6020FNJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
TC = 25°C
TC = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Avalanche energy, repetitive
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
ID*1
IDP*2
VGSS
IAS*3
EAS*3
EAR*4
PD
Tj
Tstg
600
±20
±9.6
±80
±30
10
26.7
3.5
304
150
-55 to +150
V
A
A
A
V
A
mJ
mJ
W
Reverse diode dv/dt
dv/dt 15 V/ns
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/13
20160324 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

R6020FNJ Datasheet

Power MOSFET

No Preview Available !

R6020FNJ
          
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
Symbol
dv/dt
Conditions
Values Unit
VDS = 480V, ID = 20A
50 V/ns
Tj = 125
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.41 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
V(BR)DS VGS = 0V, ID = 10A
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 10A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- 700 -
V
   
- 1 100 μA
- - 10
- - ±100 nA
3 - 5V
   
- 0.22 0.28 Ω
- 0.44 -
- 13.4 - Ω
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/13
20160324 - Rev.002


Part Number R6020FNJ
Description Power MOSFET
Maker ROHM
Total Page 15 Pages
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