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Rohm Semiconductor Electronic Components Datasheet

R6024ENJ Datasheet

Power MOSFET

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R6024ENJ
Nch 600V 24A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.165W
24A
40W
lOutline
LPT(S)
(SC-83)
TO-263(D2PAK)
(1)
(2)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R6024ENJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *3
IAR
PD
Tj
Tstg
dv/dt *4
600
24
13.0
72
20
497
0.75
4.1
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6024ENJ Datasheet

Power MOSFET

No Preview Available !

R6024ENJ
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V
Tj = 25°C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient*5
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
-
3.13 °C/W
-
-
80 °C/W
-
-
265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
600
-
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = 20V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 11.3A
RDS(on) *6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
-
0.1 100 mA
-
-
1000
-
-
100 nA
2
-
4
V
- 0.150 0.165 W
- 0.320 -
-
6.1
-
W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/12
2014.03 - Rev.B



Part Number R6024ENJ
Description Power MOSFET
Maker ROHM
Total Page 3 Pages
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R6024ENJ Datasheet PDF





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