1) Low on-resistance. lInner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source.
1 BODY DIODE
t 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Tube
Reel size (mm)
-
le l.
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R6030ENZ1
Nch 600V 30A Power MOSFET
Data Sheet
lOutline
VDSS RDS(on) (Max.)
600V 0.130W
TO-247
ID
30A
PD
120W
(1) (2) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
e 4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
t 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Tube
Reel size (mm)
-
le lApplication
Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6030ENZ1
o lAbsolute maximum ratings (Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
s Continuous drain current
Tc = 25°C Tc = 100°C
ID *1
30
A
ID *1
16.
R6030ENZ1 Datasheet
