R6035ENZ1 Description
lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple.
R6035ENZ1 Key Features
- 1 BODY DIODE
- le lApplication
R6035ENZ1 is Power MOSFET manufactured by ROHM .
lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple.