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Rohm Semiconductor Electronic Components Datasheet

R6035ENZ1 Datasheet

Power MOSFET

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R6035ENZ1
Nch 600V 35A Power MOSFET
Data Sheet
lOutline
VDSS
RDS(on) (Max.)
600V
0.102W
TO-247
ID
35A
PD
120W
(1) (2) (3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
e 4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
t 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Tube
Reel size (mm)
-
le lApplication
Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6035ENZ1
o lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
sTc = 25°C
ID *1
35
A
Continuous drain current
Tc = 100°C
ID *1
19
A
Pulsed drain current
ID,pulse *2
105
A
b Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
796
mJ
Avalanche energy, repetitive
EAR *3
1.2
mJ
O Avalanche current, repetitive
IAR
6.6
A
Power dissipation (Tc = 25°C)
PD
120
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
Reverse diode dv/dt
dv/dt *4
15
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6035ENZ1 Datasheet

Power MOSFET

No Preview Available !

R6035ENZ1
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V
Tj = 125°C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
e Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
-
1.04 °C/W
-
-
30 °C/W
-
-
265
°C
t lElectrical characteristics (Ta = 25°C)
le Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
600
-
-
V
o Zero gate voltage
drain current
s Gate - Source leakage current
Gate threshold voltage
Static drain - source
b on - state resistance
O Gate input resistance
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = 20V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 18.1A
RDS(on) *5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
-
0.1 100 mA
-
-
1000
-
-
100 nA
2
-
4
V
- 0.092 0.102 W
-
0.200
-
-
1.5
-
W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/12
2014.03 - Rev.B


Part Number R6035ENZ1
Description Power MOSFET
Maker ROHM
PDF Download

R6035ENZ1 Datasheet PDF






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