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Rohm Semiconductor Electronic Components Datasheet

R6046FNZ1 Datasheet

MOSFET

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R6046FNZ1
Nch 600V 46A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.098
46A
694W
Outline
TO-247
(1) (2) (3)
Features
Inner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
1 (2) Drain
(3) Source
4) Drive circuits can be simple.
5) Parallel use is easy.
1 BODY DIODE
(1) (2) (3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Application
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
450
C9
Marking
R6046FNZ1
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
46
23
115
30
142
5.4
23
694
150
55 to 150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6046FNZ1 Datasheet

MOSFET

No Preview Available !

R6046FNZ1
Absolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 46A
Tj = 125C
Values
50
Unit
V/ns
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 0.18 °C/W
- - 30 °C/W
- - 265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
600 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 46A
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = 30V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 23A
RDS(on) *6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
- 700 -
V
A
- 1 100
- - 100 mA
- - 100 nA
3 - 5V
- 0.075 0.098
- 0.16 -
- 1.7 -
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2016.02 - Rev.B


Part Number R6046FNZ1
Description MOSFET
Maker ROHM
Total Page 15 Pages
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