The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
R6535KNZ4
Nch 650V 35A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.115Ω ±35A 379W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-247G
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Tube
Packing code
C13
Marking
R6535KNZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650
V
±35
A
±105
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS*3
6.