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Rohm Semiconductor Electronic Components Datasheet

R6576ENZ1 Datasheet

Power MOSFET

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R6576ENZ1
  Nch 650V 76A Power MOSFET
   Datasheet
lOutline
VDSS
650V
TO-247
 
RDS(on)(Max.)
ID
PD
0.046Ω
±76A
735W
e lFeatures
1) Low on-resistance
t 2) Fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
 
 
 
 
      
lInner circuit
le lApplication
Switching
lPackaging specifications
Packing
Packing code
oMarking
Basic ordering unit (pcs)
s lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
b Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
650
±76
±228
OGate - Source voltage
static
±20
VGSS
AC (f>1Hz)
±30
Tube
C9
R6576ENZ1
450
Unit
V
A
A
V
V
Avalanche current, single pulse
IAS
13.4
A
Avalanche energy, single pulse
EAS*3
2115
mJ
Power dissipation (Tc = 25°C)
PD
735
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20171004 - Rev.004    


Rohm Semiconductor Electronic Components Datasheet

R6576ENZ1 Datasheet

Power MOSFET

No Preview Available !

R6576ENZ1
          
                Datasheet
lThermal resistance
 
                  
Parameter
Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case
RthJC*4
-
- 0.17 /W
Thermal resistance, junction - ambient
RthJA
-
- 30 /W
Soldering temperature, wavesoldering for 10s
Tsold
-
- 265
e lElectrical characteristics (Ta = 25°C)
t Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
650 -
-
V
le Zero gate voltage
drain current
Gate - Source leakage current
o Gate threshold voltage
Static drain - source
s on - state resistance
Ob Gate resistance
VDS = 650V, VGS = 0V
 
IDSS Tj = 25°C
-
Tj = 125°C
-
IGSS VGS = ±20V, VDS = 0V
-
VGS(th) VDS = VGS, ID = 2.96mA 2
VGS = 10V, ID = 44.4A
 
RDS(on)*5 Tj = 25°C
-
Tj = 125°C
-
RG f = 1MHz, open drain
-
 
 
- 100 μA
- 1000
- ±100 nA
-
4
V
 
 
0.04 0.046 Ω
-
-
0.7 - Ω
                                                                                         
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
20171004 - Rev.004


Part Number R6576ENZ1
Description Power MOSFET
Maker ROHM
PDF Download

R6576ENZ1 Datasheet PDF






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