1) Low on-resistance. 10A 40W
lInner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. d 4) Drive circuits can be simple. e 5) Parallel use is easy. (1) Gate (2) Drain (3) Source.
1 BODY DIODE
nd s 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
e n Reel size (mm)
-
m ig l.
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R8010ANX
Nch 800V 10A Power MOSFET
Datasheet
lOutline
VDSS RDS(on) (Max.)
800V 0.56W
TO-220FM
ID PD
lFeatures 1) Low on-resistance.
10A 40W
lInner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
d 4) Drive circuits can be simple. e 5) Parallel use is easy.