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Rohm Semiconductor Electronic Components Datasheet

R8010ANX Datasheet

Power MOSFET

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R8010ANX
Nch 800V 10A Power MOSFET
Datasheet
lOutline
VDSS
RDS(on) (Max.)
800V
0.56W
TO-220FM
ID
PD
lFeatures
1) Low on-resistance.
10A
40W
lInner circuit
(1) (2) (3)
for
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
d 4) Drive circuits can be simple.
e 5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
nd s 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
e n Reel size (mm)
-
m ig lApplication
s Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
m eMarking
R8010ANX
o D lAbsolute maximum ratings(Ta = 25°C)
c Parameter
Symbol
Value
Unit
e Drain - Source voltage
VDSS
800
V
w Tc = 25°C
ID *1
10
A
R Continuous drain current
eTc = 100°C
ID *1
4.6
A
t N Pulsed drain current
ID,pulse *2
40
A
o Gate - Source voltage
VGSS
30
V
NAvalanche energy, single pulse
EAS *3
6.63
mJ
Avalanche energy, repetitive
EAR *4
2.7
mJ
Avalanche current
IAR *3
5
A
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
Reverse diode dv/dt
dv/dt *5
15
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.04 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

R8010ANX Datasheet

Power MOSFET

No Preview Available !

R8010ANX
Data Sheet
lAbsolute maximum ratings
Parameter
Symbol
Conditions
Values Unit
Drain - Source voltage slope
VDS = 640V, ID = 10A
dv/dt
50 V/ns
Tj = 125°C
lThermal resistance
Parameter
Symbol
Min.
for Values
Unit
Typ. Max.
Thermal resistance, junction - case
d Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
RthJC
RthJA
Tsold
-
-
3.13
-
-
70
-
-
265
nde s lElectrical characteristics(Ta = 25°C)
me ign Parameter
Symbol
Conditions
s Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
800
-
-
om e Drain - Source avalanche
D breakdown voltage
V(BR)DS VGS = 0V, ID = 5A
-
900
-
ec w Zero gate voltage
R e drain current
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
-
Tj = 125°C
-
0.1 100
-
1000
t Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
-
100
N Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3
-
5
No Static drain - source
on - state resistance
VGS = 10V, ID = 5A
RDS(on) *6 Tj = 25°C
-
0.43 0.56
°C/W
°C/W
°C
Unit
V
V
mA
nA
V
W
Tj = 125°C
-
0.95
-
Gate input resistance
RG f = 1MHz, open drain
-
12.8
-
W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/13
2013.04 - Rev.A


Part Number R8010ANX
Description Power MOSFET
Maker ROHM
PDF Download

R8010ANX Datasheet PDF






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