RB088LAM-30TF
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR 30 V
Io 5 A
IFSM 80 A
●Features
High reliability
Small power mold type
Super low IR
●Inner Circuit
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
Quantity(pcs)
12
3000
Silicon epitaxial planar
Taping Code
TR
Marking
G0
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Duty≦0.5
Reverse direct voltage
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=90℃ Max.
30
30
5
V
V
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
80
A
Junction temperature
Storage temperature
Tj -
Tstg -
150
-55 ～ 150
℃
℃
●Characteristics (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Forward voltage
VF IF=5A
Reverse current
IR VR=30V
Min. Typ. Max. Unit
- - 0.69 V
- - 2.5 μA
Attention
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2019/05/28_Rev.002
