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RB162M-40TF - Schottky barrier diode

Key Features

  • Dimensions(Unit : mm) 0.85 3.05 for .
  • Land size figure(Unit : mm) 1.2 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability ed.
  • Construction Silicon epitaxial planer PMDU.
  • Structure mendigns.
  • Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 ecom Des 1.81±0.1 4.0±0.1 φ1.0±0.1 R ew.
  • Absolute maximum ratings(Ta=25C) t N Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 40 V o Reverse voltage (DC) VR 40 V Ave.

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Datasheet Details

Part number RB162M-40TF
Manufacturer ROHM
File Size 871.41 KB
Description Schottky barrier diode
Datasheet download datasheet RB162M-40TF Datasheet

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Data Sheet Schottky Barrier Diode AEC-Q101 Qualified RB162M-40TF Applications General rectification Features Dimensions(Unit : mm) 0.85 3.05 for Land size figure(Unit : mm) 1.2 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability ed Construction Silicon epitaxial planer PMDU Structure mendigns Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 ecom Des 1.81±0.1 4.0±0.1 φ1.0±0.1 R ew Absolute maximum ratings(Ta=25C) t N Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 40 V o Reverse voltage (DC) VR 40 V Average rectified forward current (*1) Io 1 A NForward current surge peak (60Hz / 1cyc) IFSM 30 A 3.5±0.05 1.75±0.1 8.0±0.2 3.71±0.1 1.