1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
①
for PMDU
d lConstruction de Silicon epitaxial planar
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
lStructure
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
mmeensigns 1.81±0.1
4.0±0.1
φ 1.0±0.1
3.5±0.05
1.75±0.1
o D lAbsolute maximum ratings (Ta = 25°C)
c Parameter
Symbol
Limits
Unit
e w Reverse voltage (repetitive) R e Reverse voltage (DC)
VRM
60
V
VR
60
V
Average rectified.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diode
RB162M-60TF
lApplication General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±0.1 0.05
Datasheet
AEC-Q101 Qualified
lLand size figure (Unit : mm)
1.2
2.6±0.1 3.5±0.2
0.85 3.05
lFeatures 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability
①
for PMDU
d lConstruction de Silicon epitaxial planar
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
lStructure
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
mmeensigns 1.81±0.1
4.0±0.1
φ 1.0±0.1
3.5±0.05
1.75±0.
RB162M-60TF Datasheet
