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RB168M-40TF - Schottky Barrier Diode

Key Features

  • lExternal Dimensions(Unit : mm) 1.6±0.1 0.1±0.1     0.05 for lLand Size Figure(Unit : mm) 1)Small power mold type. (PMDU) 2)High reliability ed lConstruction mendigns Silicon epitaxial PMDU 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lStructure lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.25±0.05 1.75±0.1 com Des 1.81±0.1 e w lAbsolute Maximum Ratings(Ta=25°C) R e Parameter Reverse voltage (repetitive) t N Reverse voltage (DC) o Average rectified.

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Datasheet Details

Part number RB168M-40TF
Manufacturer ROHM
File Size 1.32 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB168M-40TF Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RRBB16186M2M-4-03T0F AEC-Q101 Qualified 2.6±0.1 3.5±0.2 lApplications General rectification lFeatures lExternal Dimensions(Unit : mm) 1.6±0.1 0.1±0.1     0.05 for lLand Size Figure(Unit : mm) 1)Small power mold type.(PMDU) 2)High reliability ed lConstruction mendigns Silicon epitaxial PMDU 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lStructure lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.25±0.05 1.75±0.1 com Des 1.81±0.1 e w lAbsolute Maximum Ratings(Ta=25°C) R e Parameter Reverse voltage (repetitive) t N Reverse voltage (DC) o Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) NJunction temperature Symbol VRM VR Io IFSM Tj 4.0±0.1 φ 1.0±0.