RB218NS-40FH
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR 40 V
Io 20 A
IFSM 100 A
●Features
High reliability
Power mold type
Cathode common dual type
Super Low IR
●Inner Circuit
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB218NS40
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
45 V
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
VR Reverse direct voltage
40 V
Io
IFSM
60Hz half sin waveform，resistive load，
Io/2 per diode，Tc=115℃Max.
60Hz half sin waveform，
non-repetitive，per diode，Ta=25℃
20
100
A
A
Tj -
150 ℃
Storage temperature
Tstg -
-55 ～ 150
℃
Attention
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1/6 2019/05/27_Rev.003
