RB218T100
RB218T100 is Schottky Barrier Diode manufactured by ROHM.
Schottky Barrier Diode
Data Sheet l Application Switching power supply l Dimensions (Unit : mm)
4.5±00..31 l Structure
10.0±
0.3 0.1 f3.2±0.2
2.8±00..21
12.0±0.2 l Features 1) Cathode mon type r 2) High reliability o 3) Super low IR d f l Construction de Silicon epitaxial planar type
15.0±
0. 4 0. 2
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
5.0±0.2
8.0±0.2
14.0±0.5
2.6±0.5
0.75±00..015 ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3) Anode Cathode Anode men igns l Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol s Repetitive peak reverse voltage
VRM m e Reverse voltage
VR o D Average forward rectified current
Io c Non-repetitive forward current surge peak IFSM e Operating junction temperature
Tj w Storage temperature
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
60Hz half sin wave, resistive load, Tc=115ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode
- -
Limits Unit
°C
-55 to +150 °C t R Ne l Electrical and Thermal Characteristics (Tj= 25°C) o Parameter
Symbol
Conditions
NForward...
