Cathode common dual type 2) Low IR 3) High reliability
10.0±00..31
3.2±0.2
12.0±0.2
1
15.0±00..24
2.8±00..21
for (1)
(3)
Anode Anode
d.
Construction nde s Silicon epitaxial planar type
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
2.6±0.5 0.75±00..015
me sign.
Absolute Maximum Ratings (Tc= 25°C)
m Parameter
Symbol
e Repetitive peak reverse voltage
VRM
o D Reverse voltage
VR
c Average forward rectified current
Io
e w Non-re.
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Schottky Barrier Diode
RB228T100FH
Applications Switching power supply
Dimensions (Unit : mm)
4.5±00..31
Datasheet
AEC-Q101 Qualified Structure
Cathode (2)
5.0±0.2
8.0±0.2
Features 1) Cathode common dual type 2) Low IR 3) High reliability
10.0±00..31
3.2±0.2
12.0±0.2
1
15.0±00..24
2.8±00..21
for (1)
(3)
Anode Anode
d Construction nde s Silicon epitaxial planar type
1.2 1.3 0.8
2.45±0.5 2.45±0.5
(1) (2) (3) ROHM : TO220FN
1 : Manufacture date
14.0±0.5
2.6±0.5 0.75±00..
RB228T100FH Datasheet
