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RB238T-40 - Schottky Barrier Diode

Key Features

  • 1) Cathode common dual type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 4.5±00..31 2.8±00..21 lStructure 15.0±00..24 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 1 : Manufacture date 14.0±0.5 (1) (2) (3) Anode Cathode Anode 2.6±0.5 0.75±00..015 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current N.

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Datasheet Details

Part number RB238T-40
Manufacturer ROHM
File Size 528.09 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB238T-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2 Schottky Barrier Diode RB238T-40 Data Sheet lApplication Switching power supply lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 4.5±00..31 2.8±00..21 lStructure 15.0±00..24 12.0±0.2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : TO220FN 1 : Manufacture date 14.0±0.5 (1) (2) (3) Anode Cathode Anode 2.6±0.5 0.75±00..015 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.