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RB551V-30 - Schottky Barrier Diode

Key Features

  • 1) Small mold type. (UMD2) 2) Low VF 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φf11..0055 1.0±0.1 lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (D.

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Datasheet Details

Part number RB551V-30
Manufacturer ROHM
File Size 510.36 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB551V-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB551V-30 lApplication High frequency rectification lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1) Small mold type. (UMD2) 2) Low VF 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φf11..0055 1.0±0.